10v drive nch mosfet RCX120N25 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) high speed switching. 3) gate-source voltage v gss garanteed to be 30v 4) high power package (to-220fm). ? application ? inner circuit switching ? packaging specifications package bulk code - 500 RCX120N25 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 250 v gate-source voltage v gss ? 30 v continuous i d ? 12 a pulsed i dp ? 48 a continuous i s 12 a pulsed i sp 48 a avalanche current i as 6a avalanche energy e as 10.5 mj power dissipation(tc=25 ? c) p d 40 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 l 500 ? h, v dd =50v, r g =25 ??? t ch =25 ? c *3 limited only by maximum channel temperature allowed. ? thermal resistance symbol limits unit channel to case rth (ch-c) 3.125 ? c / w * t c =25 ? c parameter type source current (body diode) drain current parameter basic ordering unit (pieces) *1 *1 to-220fm 4.5 2.8 0.75 3.2 ( 2 )( 3 )( 1 ) 0.8 2.54 2.6 2.54 1.3 1.2 14.0 12.0 8.02.5 10.0 15.0 (1) gate (2) drain (3) souce (1) (3) (2) ?1 ? 1 body diode *3 *3 *2 *2 * 1/6 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RCX120N25 symbol min. typ. max. unit gate-source leakage i gss -- ? 100 na v gs = ? 30v, v ds =0v drain-source breakdown voltage v (br)dss 250 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --10 ? av ds =250v, v gs =0v gate threshold voltage v gs (th) 3-5vv ds =10v, i d =1ma forward transfer admittance l y fs l 3.25 - - s i d =6a, v ds =10v input capacitance c iss - 1800 - pf v ds =25v output capacitance c oss - 100 - pf v gs =0v reverse transfer capacitance c rss - 60 - pf f=1mhz turn-on delay time t d(on) - 33 - ns i d =6a, v dd 125v rise time t r - 65 - ns v gs =10v turn-off delay time t d(off) - 45 - ns r l =20.83 ? fall time t f - 20 - ns r g =10 ? total gate charge q g - 35 - nc i d =12a, gate-source charge q gs - 15 - nc v dd 125v gate-drain charge q gd - 12 - nc v gs =10v *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd - - 1.5 v i s =12a, v gs =0v *pulsed ? electrical characteristics (ta = 25 ? c) conditions m ? parameter static drain-source on-state resistance r ds (on) i d =6a, v gs =10v - 180 235 parameter conditions * * * * * * * * * * 2/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RCX120N25 ? electrical characteristic curves (ta=25 ? c) 0 5 10 15 0 1 2 3 4 5 6 7 8 9 10 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs =7.0v v gs =6.0v v gs =6.5v v gs =8.0v v gs =10.0v t a =25 c pulsed 0 1 2 3 4 5 6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =7.0v v gs =6.0v v gs =6.5v v gs =8.0v v gs =10.0v t a =25 c pulsed 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0 1 2 3 4 5 6 7 8 9 10 drain currnt : i d [a] gate - source voltage : v gs [v] fig.3 typical transfer characteristics v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 2 4 6 8 -50 0 50 100 150 gate threshold voltage : v gs(th) [v] channel temperature : t ch [ ] fig.4 gate threshold voltage vs. channel temperature v ds =10v i d =1ma pulsed 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [ ] drain current : i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 0.1 0.2 0.3 0.4 0.5 -50 0 50 100 150 static drain - source on - state resistance :r ds(on) [ ] channel temperature : t ch [ ] fig.6 static drain - source on - state resistance vs. channel temperature v gs =10v pulsed i d =12a i d =6a 3/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RCX120N25 0.01 0.1 1 10 100 0 0.5 1 1.5 2 source current : is [a] source - drain voltage : v sd [v] fig.8 source current vs. source - drain voltage v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 1 10 100 1000 10000 0.01 0.1 1 10 100 switching time : t [ns] drain current : i d [a] fig.10 switching characteristics t d(on) t r t d(off) t f v dd P 125v v gs =10v r g =10 t a =25 c pulsed 0 5 10 15 0 5 10 15 20 25 30 35 40 45 50 55 gate - source voltage : v gs [v] total gate charge : q g [nc] fig.11 dynamic input characteristics t a =25 c v dd =125v i d =12a pulsed 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 capacitance : c [pf] drain - source voltage : v ds [v] fig.12 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 forward transfer admittance:y fs [s] drain current : i d [a] fig.7 forward transfer admittance vs. drain current v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 0.1 0.2 0.3 0.4 0 5 10 15 20 static drain - source on - state resistance r ds (on)[ ] gate - source voltage : v gs [v] fig.9 static drain - source on - state resistance vs. gate - source voltage i d =6.0a i d =12.0a t a =25 c pulsed 4/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RCX120N25 0.01 0.1 1 10 100 0.1 1 10 100 1000 drain current : i d [ a ] drain - source voltage : v ds [ v ] fig.14 maximum safe operating area t a =25 c single pulse operation in this area is limited by r ds(on) (v gs = 10v) p w = 100 s p w = 1ms p w = 10ms dc operation 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.15 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse rth (ch - a) =80.3 c /w rth (ch - a) (t)=r(t) rth (ch - a) 10 100 1000 1 10 100 reverse recovery time : t rr [ns] source current : i s [a] fig.13 reverse recovery time vs. source current t a =25 c v gs =0v di/dt=100a/us pulsed 5/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RCX120N25 ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.3-1 avalanche measurement circuit v gs r g v ds d.u.t. i as l v dd fig.3-2 avalanche waveform i as v dd v (br)dss i as 2 l e as = v (br)dss - v dd v (br)dss 1 2 6/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
|
